Low-Gas-Pressure Deposition of Co-SiO2 Granular Films by Reactive Sputtering Using CoSi Alloy Target

Low Temperature Deposition SiO2 Films by SAPCVD

A Subatmospheric Pressure Chemical Vapor Deposition (SAPCVD) system was implemented for SiO2 nanometric films deposition on silicon substrates. Tetraethoxysilane (TEOS) and ozone (O3) were used as precursors and they were mixed into the SAPCVD system at 590 Torr. The deposition temperatures ranged from 140 to 265 o C and the deposition time ranged from 1 to 15 min. The measured thicknesses from...

Mid-Frequency Dual Magnetron Reactive Co-Sputtering for Deposition of Customized Index Optical Films

Reactive co-sputtering is a means to create films of customized or graded index of refraction. This gives the optical coating designer new options, and enables practical realization of new classes of coatings. Two neighboring targets may be sputtered such that material from both targets and reactive gas are incident on the workpiece, depositing a film consisting of a compound. For example, if o...

Deposition of Visible Light Active Photocatalytic Bismuth Molybdate Thin Films by Reactive Magnetron Sputtering

Bismuth molybdate thin films were deposited by reactive magnetron co-sputtering from two metallic targets in an argon/oxygen atmosphere, reportedly for the first time. Energy dispersive X-ray spectroscopy (EDX) analysis showed that the ratio of bismuth to molybdenum in the coatings can be effectively controlled by varying the power applied to each target. Deposited coatings were annealed in air...

DEPOSITION OF THIN TiO2 FILMS BY DC MAGNETRON SPUTTERING METHOD

Sputter deposition process is another old technique being used in modern semiconductor industries. Sputtering is a process that can deposit TiO2 material on wafer/glass substrates. In this process target is connected to negative high voltage. Further argon gas is introduced into the chamber and is ionized to a positive charge. The positively charged argon atoms are attracted and strike the nega...

Magnetic relaxation in Fe-(SiO2) granular films.